Infineon Technologies AG, Chartered Semiconductor Mfg, and IBM have announced a joint development agreement to accelerate the move to 65nm semiconductor manufacturing process technology. The multi-year engagement closely aligns Infineons low-power silicon expertise with IBMs process technology and Chartereds efforts to drive a common foundry process platform that scales from 90nm through next-generation 65nm technology and provides a path to 45nm.
The work will be conducted in IBMs newly-opened 300mm development lab East Fishkill, New York. IBM and Chartered technologies are among the first on 65nm circuits developed and produced in the new facility, called the Advanced Semiconductor Technology Center, or ASTC 300, which began operations last month. Nearly 200 engineers from the three companies will work together to define industry-leading process technologies for next-generation semiconductors.
Apart from developing a common advanced foundry process at 65nm, the three companies also plan to jointly develop variants tuned for high performance and low power. The companies are also exploring extensions to 45nm technology.
Source: Engineering Times
