AUSTIN, Texas — Advanced Micro Devices researchers have developed a low aspect ratio Finfet-like transistor the company may begin producing as early as 2007 at the 45-nm node.
Zoran Krivokapic, the lead researcher on the multigate project, based at the companys technology research group in Sunnyvale, Calif., reported that the transistor switching speed — expressed as CV/I, a measure of capacitance, voltage and current — was 0.26 picoseconds for the NMOS devices and 0.45 ps for the PMOS transistors. AMD said those are the fastest transistors reported to date for 20-nm gate length structures.
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